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Principal Device Engineer

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Location: Milpitas, CA, United States 
Req ID: JR-0000038879


In this position, the individual will study and optimize state of the art 3D NAND flash devices. The individual will characterize memory cells and arrays, evaluate their reliability, optimize operating methods and parameters, and invent new solutions to tackle challenging problems. Further duties include evaluating the efficacy of various flash management algorithms and assessing their impact on system operation. The individual will work closely with engineers from process, design, device, product, test and system engineering groups.

This position requires an MS/PhD degree in Electrical Engineering, Applied Physics, or a related field, and 3+ years of relevant industry experience. 
 A strong background in semiconductor physics is required, and non-volatile memory device experience is a plus. 
The ideal candidate has a proven ability to achieve results in a fast moving, dynamic environment; 
is self-motivated and self-directed; 
possesses a demonstrated ability to work well with people within and outside the team; 
communicates well; 
has strong analytical skills; 
may have experience with such data analysis tools as TIBCO Spotfire and/or scripting languages.