The WD San Jose Research Center is a world-class research laboratory located in San Jose, California. Research activities at the lab focus on all aspects of information storage and storage architecture. The lab houses more than 100 researchers, most of whom have PhDs in engineering, physics or related disciplines.
The job opening is for a full-time Research Staff Member in the emerging non-volatile memory materials group. The mission of the group is to develop materials for exploratory non-volatile memories such as Phase Change, ReRAM and MRAM. We are looking for a scientist/engineer with a strong background in sputtering and thin film magnetism to develop MRAM materials. You will be part of a team exploring potential memory applications of spin-based effects including STT, SOT and VCMA based MRAM.
The candidate will be responsible for operation of a state of the art multi-chamber sputter system, design of materials experiments for optimizing MRAM performance, sputter deposition of films and characterization of magnetic and transport properties using a variety of techniques and tools such as polar Kerr, VSM, 4 point probes, XRD, and PPMS. The candidate will actively collaborate with other thin film materials scientists as well as with a nanofabrication team and device characterization team.
- Minimum of a Ph.D degree in Physics, Materials Science, Electrical Engineering, or closely related field. Post-doctoral experience desirable.
- The candidate should have expertise in one or more of the following areas:
- Hands-on experience with state-of-the-art multi-chamber thin film sputter deposition
- Hands-on experience with magnetic characterization techniques
- Deep knowledge of magnetism and magnetic materials
- Demonstrated ability to self-direct a research project.
- Experience on MRAM or related spin torque phenomena.
- Strong communication skills and the ability to both work independently and in a team environment are essential.